2014. 3. 31 1/3 semiconductor technical data ktc802e epitaxial planar npn transistor revision no : 3 general purpose application. switching application. features h high current. h low v ce(sat) . : v ce(sat) ? 250mv at i c =200ma/i b =10ma. h complementary to kta702e. maximum ratings (ta=25 ? ) electrical characteristics (ta=25 ? ) characteristic symbol rating unit collector-base voltage v cbo 15 v collector-emitter voltage v ceo 12 v emitter-base voltage v ebo 6 v collector current i c 500 ma i cp (note) 1 a collector power dissipation p c * 200 mw junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =15v, i e =0 - - 100 na collector-base breakdown voltage v (br)cbo i c =10 a 15 - - v collector-emitter breakdown voltage v (br)ceo i c =1ma 12 - - v emitter-base breakdown voltage v (br)ebo i e =10 a 6 - - v dc current gain h fe v ce =2v, i c =10ma 270 - 680 - collector-emitter saturation voltage v ce(sat) i c =200ma, i b =10ma - 90 250 mv transition frequency f t v ce =2v, i c =10ma, f t =100mhz - 320 - mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 7.5 - pf note : single pulse pw=1ms. * total rating. equivalent circuit (top view) marking
2014. 3. 31 2/3 ktc802e revision no : 3
2014. 3. 31 3/3 ktc802e revision no : 3
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